The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy
Identifieur interne : 000084 ( Main/Exploration ); précédent : 000083; suivant : 000085The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy
Auteurs : RBID : ISTEX:11664_1995_Article_BF02676835.pdfEnglish descriptors
Abstract
We have investigated the effect of diethylzinc (DEZn) on the lattice constant and the growth rate of InGaAs. Introducing DEZn for p-type doping induces the contraction of lattice constant and the reduction of growth rate compared to undoped InGaAs. Depletion of indium is responsible for these effects. These effects are reduced at lower growth temperatures or at lower growth pressures. From the observed effects of the growth temperatures and the growth pressures on the contraction of the lattice constant, it is concluded that depletion of indium occurs in the gas phase.
DOI: 10.1007/BF02676835
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Box 106, 305-606, Taejon</wicri:regionArea><wicri:noRegion>Taejon</wicri:noRegion></affiliation></author><author><name>Kwang Eui Pyun</name><affiliation wicri:level="1"><mods:affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon</wicri:regionArea><wicri:noRegion>Taejon</wicri:noRegion></affiliation></author><author><name>Hyung Moo Park</name><affiliation wicri:level="1"><mods:affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Semiconductor Division, ETRI, Yusong, P.O. 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Depletion of indium is responsible for these effects. These effects are reduced at lower growth temperatures or at lower growth pressures. From the observed effects of the growth temperatures and the growth pressures on the contraction of the lattice constant, it is concluded that depletion of indium occurs in the gas phase.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="8e496632c4a172e18ce5252ded1afef591057695"><titleInfo lang="eng"><title>The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy</title></titleInfo><name type="personal"><namePart type="given">Jeong Soo</namePart><namePart type="family">Kim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Seung Won</namePart><namePart type="family">Lee</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Hyung Mun</namePart><namePart type="family">Kim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Dae Kon</namePart><namePart type="family">Oh</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Heung Ro</namePart><namePart type="family">Choo</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Dong Hoon</namePart><namePart type="family">Jang</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Hong Man</namePart><namePart type="family">Kim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Kwang Eui</namePart><namePart type="family">Pyun</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">Hyung Moo</namePart><namePart type="family">Park</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Semiconductor Division, ETRI, Yusong, P.O. Box 106, 305-606, Taejon, Korea</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-04-27</dateCreated><dateValid encoding="w3cdtf">2007-07-14</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We have investigated the effect of diethylzinc (DEZn) on the lattice constant and the growth rate of InGaAs. Introducing DEZn for p-type doping induces the contraction of lattice constant and the reduction of growth rate compared to undoped InGaAs. Depletion of indium is responsible for these effects. These effects are reduced at lower growth temperatures or at lower growth pressures. From the observed effects of the growth temperatures and the growth pressures on the contraction of the lattice constant, it is concluded that depletion of indium occurs in the gas phase.</abstract><subject lang="eng"><genre>Key words</genre><topic>Diethylzinc</topic><topic>InGaAs</topic><topic>lattice constant</topic><topic>organometallic vapor phase epitaxy (OMVPE)</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 24</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-11-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 45</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02676835</identifier><identifier type="matrixNumber">Art33</identifier><identifier type="local">BF02676835</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1697</start><end>1701</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin><recordIdentifier>11664_1995_Article_BF02676835.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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